Low forward voltage drop, no stored charge
Suitable for: low voltage high frequency rectification
Metal-semiconductor contacts are generally used to form Schottky barriers, but due to the presence of SiO2 layers between the contact interfaces when the metal is in contact with the semiconductor, the contact resistance and surface state density are significantly increased, resulting in greatly reduced device performance.
We have adopted diffusion barriers and multi-layer metallization techniques. In order to improve the reverse performance, we have adopted new process technologies such as guard ring structures.
• In order to reduce the series resistance of the package,reduce the forward voltage drop, and maximize the contact area between the lead and the chip.
• Axial lead, transparent housing, small size, light weight and high reliability
• Meet the standard requirements of GB7581 "Dimensions of Semiconductor Discrete Devices"
Achieve optimal barrier metal thickness and form the best surface for the best electrical performance and high yield of the die
100% microscopic inspection of the chip before packaging, eliminating defective chips
applicable
Quality Assurance
Keep improving
For your choice
Flows
1.Film marking
2.Cleaning oxidation
3.OAP and glue
4.Lithographic exposure,development, rear arch
5.Hard film,corrosion
6.Hard film,injection
7.Remove glue
8.B push knot,oxidize to form P+ isolation
9.Photolithography
10.Cleaning P-injection oxidation
11.P-injection increases voltage to reduce leakage current
12. bleaching acid to remove the lead hole oxide layer
13.Cleaning steam CR
14.Alloy forming alloy barrier
15.Push CR
16.Cleaning evaporation,evaporation of aluminum
17,Reverse engraved aluminum
18.Back thinning
19.Cleaning bleaching acid back metallization
20.Molding test
• The reverse leakage characteristics were checked under temperature and the sample was subjected to a destructive physical experiment.
• Hard breakdown characteristic curve, minimum leakage current at room temperature, 0.2-0.3mA
• Under the 200mA breakdown current, the characteristic curve is stable, no leakage current becomes large, the curve becomes soft, and the failure modes such as creep channel, bubbling, punch-through, etc.
pressure reduction
Stable
breakdown
characteristics
leakage
reverse recovery time
large inrush currents
• Beautifully printed and tightly packed
• Thick cardboard for better protection
• ASEMI logo, quality assurance
Schottky diodes are widely used in switching power supplies, inverters, drivers and other circuits for high frequency, low voltage, high current
rectifier diodes, freewheeling diodes, protection diodes, or rectifier diodes and small signal detection in circuits such as microwave
communication. The diode is used. Welcome to consult the sampling test.